Riber 2300 P Multiple Chamber MBE Growth System

Three interconnected chambers for growth of: 1) As-based III-V semiconductor materials, 2) II-VI semiconductor materials, and 3) Te and Se-based 3D topological insulators (TI) V2VI3 and related compounds.
The III-V chamber includes Ga, In, Al, As, Si and Be solid sources as well as an As valved cracker cell. The II-VI chamber contains Cd, Zn, Mg, Be, Te, ZnCl2, Bi, Sb and Mn solid sources, a Se valved cracker cell and a Nitrogen rf-plasma source.
The third chamber includes Se and Bi sources, as well as an electron beam evaporator for the deposition of refractory metals
The three chambers are connected by UHV transfer modules and an interlocked loading chamber. The UHV transfer allows for growth of mixed hybrid structures combining the materials of the different chambers into a single structure.

DCA MBE Chamber

Nomarski Olympus Interference Contrast Microscope

Class 100 Laminar Flow Exhaust Hood

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